Method of manufacturing a Schottky barrier rectifier

Details Method of manufacturing a Schottky barrier rectifier Method of manufacturing a Schottky barrier rectifier

2007-05-22

2007-05-22

Huynh, Andy (Department: 2818)

Semiconductor device manufacturing: process

Forming schottky junction

C438S534000, C438S092000, C257S471000

Reexamination Certificate

active

11023272

ABSTRACT:
A Schottky barrier rectifier, in accordance with embodiments of the present invention, includes a first conductive layer and a semiconductor. The semiconductor includes a first doped region, a second doped region and a plurality of third doped regions. The second doped region is disposed between the first doped region and the first conductive layer. The plurality of third doped regions are disposed in the second doped region. The first doped region of the semiconductor is heavily doped with a first type of dopant (e.g., phosphorous or arsenic). The second doped region is moderately doped with the first type of dopant. The plurality of third doped regions are moderately to heavily doped with a second type of dopant.

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