Method of manufacturing a ROM device having contact holes treate

Fishing – trapping – and vermin destroying

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437173, 437194, 437937, H01L 21265

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active

055808085

ABSTRACT:
A method for manufacturing a mask ROM by first forming a contact hole with a semiconductor within. A surface treatment is then applied to supply by hydrogen atoms to the surface of the semiconductor. The contact hole is selectively irradiated with energy beams so as to produce an irradiated contact hole and a non-irradiated contact hole. In the non-irradiated contact hole a conductive or semiconductor thin film is formed and a circuit formed on the conductive or semiconductor thin film. The circuit and the non-irradiated hole are connected to each other and the irradiated hole and the circuit are insulated from each other.

REFERENCES:
patent: 4476157 (1984-10-01), Shinozaki
patent: 4525922 (1985-07-01), Kiriseko
patent: 5196372 (1993-03-01), Mikoshiba et al.
patent: 5284544 (1994-02-01), Mizutani et al.
patent: 5302855 (1994-04-01), Matsomoto et al.
patent: 5308791 (1994-05-01), Horiike et al.
patent: 5352330 (1994-10-01), Wallace
patent: 5364664 (1994-11-01), Tsubouchi et al.
patent: 5438218 (1995-08-01), Nakamura et al.
Wallace et al. An ESDIAD Study of Chemisorbed Hydrogen on clean and H-exposed Si(111).times.(7.times.7), Surface Science, 239 (1990).fwdarw.pp. 1-12.

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