Coating processes – Direct application of electrical – magnetic – wave – or... – Pretreatment of substrate or post-treatment of coated substrate
Patent
1994-08-12
1996-06-18
King, Roy V.
Coating processes
Direct application of electrical, magnetic, wave, or...
Pretreatment of substrate or post-treatment of coated substrate
427551, 427523, 427249, 25037001, 423446, B05D 306, G01J 100
Patent
active
055275656
ABSTRACT:
A method of manufacturing a radiation sensor element. The method includes providing a diamond body which comprises crystalline diamond material which has a nitrogen impurity concentration of less than 150 ppm. The body is typically a synthetic diamond manufactured by a high temperature/high pressure process, or by a chemical vapour deposition process. The body is hydrogenated to cause atomic hydrogen to be incorporated into the diamond crystal lattice. Hydrogenation can be carried out by ion implantation, or by exposing the body to a hydrogen plasma. Where the sensor element is to be used as a counting diamond, electrical contacts are formed on the body, for example by ion implantation.
REFERENCES:
patent: 3824680 (1974-07-01), Kozlov et al.
patent: 4045674 (1977-08-01), Vermeulen
patent: 4465932 (1984-08-01), Burgemeister
patent: 4833328 (1989-05-01), Prins et al.
patent: 4957591 (1990-09-01), Sato et al.
patent: 5055686 (1991-10-01), Jones
patent: 5079425 (1992-01-01), Imai et al.
patent: 5097133 (1992-03-01), Nam et al.
patent: 5128546 (1992-07-01), Nam et al.
patent: 5216249 (1993-06-01), Jones et al.
patent: 5399868 (1995-03-01), Jones et al.
Keddy Rex J.
Nam Leong T.
Prins Johan F.
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