Method of manufacturing a radiation-emitting semiconductor diode

Fishing – trapping – and vermin destroying

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437126, 437129, 437133, H01L 2160

Patent

active

055411398

ABSTRACT:
The invention relates to a method of manufacturing a radiation-emitting semiconductor diode (10) whereby a sacrificial layer (1) comprising a polymer is provided on a first side face (11) of a semiconductor body (20) which contains at least one radiation-emitting semiconductor diode (10), a coating (2) is subsequently provided on the first side face (11) and on a second side face (12) of the semiconductor body (20) which encloses an angle with the first side face (11) and which forms an exit face for the radiation to be generated by the diode (10), after which the first side face (11) is divested of the sacrificial layer (1) and of the portion (21) of the coating (2) situated thereon through etching of the sacrificial layer (1). It is possible by such a method, for example, to cover the mirror faces (11, 14) of a laser diode (10) selectively with a reflecting, anti-reflection, or passivating coating (2). A disadvantage of the known method is that laser diodes (10) manufactured thereby are difficult to solder. According to the invention, this disadvantage is obviated in that a protective layer (3) comprising an inorganic material is provided on the sacrificial layer (1) before the provision of the coating (2) in the method. Such a protective layer (3) prevents damage to the sacrificial layer (1), and thus prevents portions of the coating (2), which cannot be removed anymore, from depositing on the first side face (11) which comprises, for example, a metal layer (7). Preferably, the protective layer (3) comprises a metal, for example aluminium. This also prevents the sacrificial layer (1) from becoming badly soluble owing to UV radiation released in a sputter deposition process of the coating (2). Remainders of the sacrificial layer (1) on the metal layer (7), which also result in bad soldering properties, are avoided thereby. (Laser) diodes thus manufactured have a long useful life and are highly suitable for high-power applications.

REFERENCES:
patent: 4985370 (1991-01-01), Ponsee et al.
patent: 5104824 (1992-04-01), Clausen, Jr. et al.
patent: 5171706 (1992-12-01), Matsumoto et al.
patent: 5237639 (1993-09-01), Kato et al.
patent: 5300452 (1994-04-01), Chang et al.

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