Method of manufacturing a power transistor

Details Method of manufacturing a power transistor Method of manufacturing a power transistor

1975-06-16

1976-07-20

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29576R, 148 15, 148175, 156 17, H01L 21302

Patent

active

039704874

ABSTRACT:
A method for manufacturing a power transistor having a highly doped emitter zone and a narrow base zone with a flat doping profile.
In a long-term diffusion step ensuring the flat doping profile, the base zone is diffused into a lowly doped substrate serving as a collector. In a subsequent etching process, the base zone is etched down to a shell-shaped remainder. A large area, highly doped emitter zone with a steep doping profile and thus a high emitter efficiency is introduced into this shell-shaped remainder in a short-term diffusion step.

REFERENCES:
patent: 3678573 (1972-07-01), Driver
patent: 3755001 (1973-08-01), Kool et al.
patent: 3806361 (1974-04-01), Lehner

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