Method of manufacturing a polysilicon thin film transistor

Details Method of manufacturing a polysilicon thin film transistor Method of manufacturing a polysilicon thin film transistor

1994-07-29

1995-06-13

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437247, 437913, 437937, 148DIG1, 148DIG90, 148DIG150, H01L 21786

Patent

active

054242304

ABSTRACT:
An amorphous silicon hydride thin film is deposited on an insulating body by a plasma CVD method, and is then heated for dehydrogenating the amorphous silicon thin film so that a dehydrogenated amorphous silicon thin film containing hydrogen of 3 atomic % or less is formed. The insulating body may be an insulating substrate (such as a glass substrate) alone, or a combination of an insulating substrate with an intermediate insulating base layer thereon. Impurity ions are injected into the dehydrogenated amorphous silicon hydride thin film to form source and drain regions. Excimer laser beams are applied to the dehydrogenated amorphous silicon thin film, thereby polycrystallizing the amorphous silicon thin film into a polysilicon thin film and activating the injected impurity ions.

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Sameshima et al "Xecla Excimer Laser Annealing Used in the Fabrication of Poly-Su TfT's", IEEE Electron Device Letter 7(5), May 1986.

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