Method of manufacturing a polycrystalline semiconductor resistan

Details Method of manufacturing a polycrystalline semiconductor resistan Method of manufacturing a polycrystalline semiconductor resistan

1990-10-24

1992-11-17

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437901, 437918, 437109, 437967, H01L 214763

Patent

active

051643383

ABSTRACT:
The invention relates to a method of manufacturing a polycrystalline semiconductor resistance layer of silicon on a silicon body. First an insulating layer is formed on the silicon body and then a polycrystalline silicon layer is deposited. To the deposited polycrystalline silicon layer is applied a further polycrystalline silicon layer having a crystallite structure coarser with respect to that of the first polycrystalline silicon layer. The two polycrystalline silicon layers are additionally doped.

REFERENCES:
patent: 3558374 (1971-01-01), Boss et al.
patent: 4178674 (1979-12-01), Liu et al.
patent: 4379020 (1983-04-01), Glaeser et al.
patent: 4413403 (1983-11-01), Ariizumi
patent: 4446613 (1984-05-01), Beinglass et al.
patent: 4742020 (1988-05-01), Roy
patent: 4781766 (1988-11-01), Barnett et al.
patent: 4877753 (1989-10-01), Freeman
Ghardhi, S., VLSI Fabrication Principles, John Wiley & Sons, N.Y., p. 230, 1983.
Wolf, S., et al., Silicon Processing for the VLSI Era, vol. 1, Lattice Press, Calif., pp. 163, 335.

Affiliated with

Also associated with

Rating

Method of manufacturing a polycrystalline semiconductor resistan does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing a polycrystalline semiconductor resistan, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a polycrystalline semiconductor resistan will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1171812