Method of manufacturing a point source light-emitting diode

Details Method of manufacturing a point source light-emitting diode Method of manufacturing a point source light-emitting diode

2008-03-11

2008-03-11

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Having diverse electrical device

C438S022000, C438S048000, C257S091000, C257SE33027, C257SE33067

Reexamination Certificate

active

11481833

ABSTRACT:
A point source light emitting-diode (LED) comprises a substrate, an epitaxy structure, a first electrode, an isolation layer, a bonding layer, a contact layer, and a connection bridge. The epitaxy structure is located on the substrate, and the substrate has a pattern including a light emitting area located on the light-emitting surface of the epitaxy structure. The first electrode is located on the substrate, and the isolation layer is located on the epitaxy structure adjacent to the first electrode. The contact layer is located on the first electrode, and the bonding layer is located on one portion of the isolation layer. The connection bridge with a width less than one half of the diameter of the light emitting area is located on the other portion of the isolation layer, thereby connecting the contact layer and the bonding layer.

REFERENCES:
patent: 6445007 (2002-09-01), Wu et al.

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