Method of manufacturing a planar buried heterojunction laser

Details Method of manufacturing a planar buried heterojunction laser Method of manufacturing a planar buried heterojunction laser

1992-03-25

1994-01-11

Kunemuno, Robert

Fishing, trapping, and vermin destroying

437129, 437133, 362 43, 362 45, H01L 2120

Patent

active

052780945

ABSTRACT:
In a method of manufacturing a planar buried heterojunction laser a semiconductor structure is etched to delimit a laser stripe upstanding on a confinement layer. Lateral layers surround the laser stripe to constitute the planar buried heterojunction laser. They are formed by a non-selective growth method not only at the sides of said stripe but also on top of said stripe to create a parasitic projection. These layers and the projection are subsequently covered with a contact localizing layer. The projection is then removed to form a contact window in the contact localizing layer for localizing an electrical contact on top of the laser stripe. The invention finds a particular application in the manufacture of lasers for fiber optic telecommunication systems.

REFERENCES:
patent: 4111725 (1978-09-01), Cho et al.
patent: 4994143 (1991-02-01), Kim
patent: 5128276 (1992-07-01), Ambrosius et al.
patent: 5138626 (1992-08-01), Yap
patent: 5143863 (1992-09-01), Ohnaka et al.
patent: 5148439 (1992-09-01), Wunstel et al.

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