Method of manufacturing a piezoelectric thin film resonator

Metal working – Piezoelectric device making

Reexamination Certificate

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C029S831000, C029S832000, C029S846000, C029S847000

Reexamination Certificate

active

07124485

ABSTRACT:
A method of manufacturing a piezoelectric thin film resonator forms, after forming a piezoelectric film on a substrate so as to cover a lower electrode formed on the substrate, a resist layer so as to cover the piezoelectric film, forms a mask composed of the resist layer on the piezoelectric film by forming, in the resist layer, an exposure hole for exposing a formation part of an upper electrode on the piezoelectric film, forms an electrode material layer for forming the upper electrode on the piezoelectric film exposed via the exposure hole and on the mask, and then forms the upper electrode by removing the electrode material layer on the mask by removing the mask.

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patent: 5075641 (1991-12-01), Weber et al.
patent: 5692279 (1997-12-01), Mang et al.
patent: 6260960 (2001-07-01), Hashizume et al.
patent: 6271619 (2001-08-01), Yamada et al.
patent: 6657363 (2003-12-01), Aigner
patent: 58137317 (1983-08-01), None
patent: 58153412 (1983-09-01), None
patent: 60171822 (1985-09-01), None
patent: 9-64683 (1997-03-01), None
patent: 10200354 (1998-07-01), None
patent: 1-251159 (2001-09-01), None
English Language Abstract of JP 2001-251159.
English Language Abstract of JP 58-137317.
English Language Abstract of JP 58-153412.
English Language Abstract of JP 60-171822.
English Language Abstract of JP 9-64683.
English Language Abstract of JP 10-200354.

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