Method of manufacturing a piezoelectric thin film device

Metal working – Piezoelectric device making

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C029S594000, C310S312000, C310S326000

Reexamination Certificate

active

07854049

ABSTRACT:
In a piezoelectric thin film device of the present invention, the degree of flexibility is enhanced in selection of a piezoelectric material constituting a piezoelectric thin film and the crystal orientation in the piezoelectric thin film. A piezoelectric thin film filter, including four film bulk acoustic resonators, has a configuration where a filter section for providing a filter function of the piezoelectric thin film filter is bonded with a flat base substrate mechanically supporting the filter section via an adhesive layer. In manufacturing of the piezoelectric thin film filter, a piezoelectric thin film is obtained by performing removal processing on a piezoelectric substrate, but the piezoelectric thin film obtained by removal processing cannot independently stand up under its own weight. For this reason, a prescribed member including the piezoelectric substrate is previously bonded to the base substrate as a support prior to the removal processing.

REFERENCES:
patent: 3897628 (1975-08-01), Hanak et al.
patent: 5771555 (1998-06-01), Eda et al.
patent: 6445265 (2002-09-01), Wright
patent: 6992420 (2006-01-01), Jang et al.
patent: 7432785 (2008-10-01), Yoon et al.
patent: 2004/0207033 (2004-10-01), Koshido
patent: 2006/0006768 (2006-01-01), Ishii
patent: 1294780 (2001-05-01), None
patent: 1595798 (2005-03-01), None
patent: 62-008610 (1987-01-01), None
patent: 63082116 (1988-04-01), None
patent: 8-18115 (1996-01-01), None
patent: 10-308640 (1998-11-01), None
patent: 2000-151321 (2000-05-01), None
patent: 2000-223996 (2000-08-01), None
patent: 2003-234630 (2003-08-01), None
patent: 2005-094735 (2005-04-01), None
patent: 2006-50592 (2006-02-01), None
patent: 2004-089137 (2004-10-01), None
patent: 0616508 (2006-08-01), None
“Chinese and Foreign Technique Information,” Dec. 31, 1995, Period 5, pp. 23-24.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of manufacturing a piezoelectric thin film device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing a piezoelectric thin film device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a piezoelectric thin film device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4220906

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.