Metal working – Piezoelectric device making
Patent
1995-05-11
1997-09-16
Hall, Carl E.
Metal working
Piezoelectric device making
29424, H01L 4122
Patent
active
056667060
ABSTRACT:
A piezoelectric acoustic wave device includes a substrate and a piezoelectric plate. The piezoelectric plate includes a resonating part, and has a top electrode at least on the top surface of the resonating part. The substrate and the piezoelectric plate are directly bonded at an area where they are in contact with each other by a chemical bond such as a covalent bond and an ionic bond. A depression is formed in at least one of the substrate and the piezoelectric plate. The method of manufacturing the piezoelectric acoustic wave device includes the steps of forming a depression in at least one of the substrate and the piezoelectric plate, filling the depression with an intermediate support layer, cleaning the surfaces of the substrate and the piezoelectric plate to directly bond to each other by a chemical bond, forming electrodes, and removing the intermediate support layer.
REFERENCES:
patent: 3239908 (1966-03-01), Nakamura
patent: 3924312 (1975-12-01), Coussot
patent: 4009516 (1977-03-01), Chiang et al.
M. Shinpo; Bonding Method of Silicon Crystalline Body, Abstract of JP 60-51700(A) dated Mar. 23, 1985 which is the first Laid-open application of JP 62-27040.
Eda Kazuo
Kanaboshi Akihiro
Taguchi Yutaka
Tomita Yoshihiro
Hall Carl E.
Matsushita Electric - Industrial Co., Ltd.
LandOfFree
Method of manufacturing a piezoelectric acoustic wave device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of manufacturing a piezoelectric acoustic wave device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a piezoelectric acoustic wave device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-210182