Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Including passive device
Reexamination Certificate
2007-10-02
2007-10-02
Nguyen, Cuong (Department: 2811)
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
Including passive device
C438S171000, C438S190000, C438S210000, C438S393000
Reexamination Certificate
active
11179685
ABSTRACT:
An impedance matching network is integrated on a first die and coupled to a second die, with the first and second dies mounted on a conductive back plate. The impedance matching network comprises a first inductor bridging between the first and second dies, a second inductor coupled to the first inductor and disposed on the first die, and a metal-insulator-metal (MIM) capacitor disposed on the first die. The MIM capacitor has a first metal layer coupled to the second inductor, and a second metal layer grounded to the conductive back plate. A method for manufacturing the integrated impedance matching network comprises the steps of forming an inductor on a die, forming a capacitor on the die, coupling the capacitor to the inductor, coupling the die bottom surface and the capacitor to a conductive plate, and coupling the inductor to another inductor that bridges between the die and another die.
REFERENCES:
patent: 6512285 (2003-01-01), Hashemi et al.
patent: 2005/0236689 (2005-10-01), Sugiura et al.
Li Qiang
Liu Lianjun
Miller Melvy F.
Pacheco Sergio P.
Freescale Semiconductor Inc.
Ingrassia Fisher & Lorenz
Nguyen Cuong
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