Method of manufacturing a p-type compound semiconductor thin fil

Details Method of manufacturing a p-type compound semiconductor thin fil Method of manufacturing a p-type compound semiconductor thin fil

1990-03-29

1992-12-01

Kunemund, Robert

Fishing, trapping, and vermin destroying

437 95, 437108, 437111, 437112, 437945, 437946, 148DIG57, 148DIG110, 156610, H01L 2120

Patent

active

051680777

ABSTRACT:
A p-type GaAs or AlGaAs thin film is formed by a MOCVD method. In the growing step of the thin film, the thin film is doped with a high concentration of carbon atoms forming an acceptor level such that the carrier concentration of the thin film falls within the range of between 1.times.10.sup.18 cm.sup.-3 and 1.times.10.sup.20 cm.sup.-3. At least one of trimethyl gallium and trimethyl aluminum is used as a raw material gaseous compound of III-group element, and arsine is used as a raw material gaseous compound of V-group element. The thin film is formed by an epitaxial growth under the molar ratio V/III of the V-group element supply rate to the III-group element supply rate, which is set at such a small value as 0.3 to 2.5, the temperature of 450 to 700.degree. and the pressure of 1 to 400 Torr. The thin film formed under these conditions exhibits a mirror-like smooth surface, and the film-growth rate is dependent on the supply rate of the V-group element.

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