Metal treatment – Compositions – Heat treating
Patent
1984-10-17
1986-06-24
Roy, Upendra
Metal treatment
Compositions
Heat treating
29571, 29576B, 29577C, 29576T, 148175, 148187, 357 231, 357 91, H01L 21265, C30B 3300
Patent
active
045966044
ABSTRACT:
A method of obtaining a multilayer semiconductor device by forming a semiconductor crystallized layer through an insulative material over a semiconductor substrate in which a semiconductor device is formed. The insulative material is formed on the semiconductor substrate in which the semiconductor device is fabricated and a first semiconductor layer is formed on the insulative material. Thereafter, the surface of the first semiconductor layer is planarized and an insulative material is formed on this planarized surface, then a second semiconductor layer is formed on this insulative material. Next, the second semiconductor layer is crystallized by the irradiation of an energy beam, thereby fabricating a device in the second crystallized semiconductor layer.
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"3-Dimensional SOI/CMOS IC's Fabricated by Beam Recrystallization," Kawamura et al., IEDM 1983.
Akiyama Shigenobu
Ogawa Shin-ichi
Terui Yasuaki
Agency of Industrial Science and Technology
Roy Upendra
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