Method of manufacturing a multilayer electrode containing silici

Details Method of manufacturing a multilayer electrode containing silici Method of manufacturing a multilayer electrode containing silici

1987-03-03

1989-09-26

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437200, 437202, H01L 2124, H01L 21285

Patent

active

048700339

ABSTRACT:
An electrode using Ti or Zr having a highly reactive property but insuring a good and stable electric contact with a silicon semiconductor device surrounded by an oxygen atom-containing insulating film is realized with simplified and reduced manufacturing steps at a reduced cost by first revealing a selective surface region of the silicon semiconductor through a window, and then laminating thereon including the selective surface region a first metal layer of Ti or Zr and then a second metal layer of Mo or W to cover and protect the first metal layer from oxidation, and then etching away the laminated layers leaving that portion corresponding to the selective surface region of the device, and thereafter heating the assembly to form a silicide of the first metal with silicon of the underlying semiconductor. The upper metal layer is covered with a protective insulating layer to avoid oxidation of the upper metal layer. The step of covering with the protective insulating layer should preferably be taken before the heat-treatment for the silicide formation.

REFERENCES:
patent: 3465211 (1969-09-01), Adams
patent: 4228212 (1980-10-01), Brown et al.
patent: 4545116 (1985-10-01), Lau
patent: 4585515 (1986-04-01), Maa
patent: 4751198 (1988-06-01), Anderson
patent: 4777150 (1988-10-01), Deneuville et al.
patent: 4800177 (1989-01-01), Nakamae

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