Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having growth from a solution comprising a solvent which is...
Reexamination Certificate
2005-06-28
2005-06-28
Hiteshew, Felisa (Department: 1765)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having growth from a solution comprising a solvent which is...
C002S002120, C977S726000
Reexamination Certificate
active
06911082
ABSTRACT:
Multi-layered semiconductor nanoparticles having a very narrow grain-size distribution and exhibiting a spectrum having a narrow wavelength-width peak are prepared by a manufacturing method combining a monodisperse semiconductor nanoparticle manufacturing method and a multi-layer semiconductor nanoparticle preparation method. The nature of a solution of monodisperse semiconductor nanoparticles that is stabilized by a surface stabilizer is transformed between hydrophilic and lipophilic by substituting the surface stabilizer. The stabilized semiconductor nanoparticles are then shifted between an aqueous layer and an organic layer. The semiconductor nanoparticles are coated with multiple layers in the organic layer, and the organic layer is drawn off to recover the semiconductor nanoparticles therefrom.
REFERENCES:
patent: 5541712 (1996-07-01), Fujitaka et al.
patent: 6403056 (2002-06-01), Unger et al.
patent: WO 99/26299 (1998-11-01), None
patent: 1 375 625 (2003-06-01), None
Dmitri V. Talapin et al., “Highly Luminescent Monodisperse CdSe and CdSe,ZnS Nanocrystals Synthesized in a Hexadecylamine-Trioctylphosphine Oxide-Trioctylphosphine Mixture”, NANO Letters (2001), vol. 1., No. 4, pp. 207-211.
Shu-Hong Yu et al., “Benzene-Thermal Synthesis and Optical Properties and CdS Nanocrystalline”, Nanostructured Materials, vol. 10, No. 8, (1998), pp. 1307-1316.
Kuwabata Susumu
Sato Keiichi
A. Marquez, Esq. Juan Carlos
Fisher Esq. Stanley P.
Hitachi Software Engineering Co., LTD
Hiteshew Felisa
Reed Smith LLP
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