Method of manufacturing a MOSFET with LDD regions

Details Method of manufacturing a MOSFET with LDD regions Method of manufacturing a MOSFET with LDD regions

1993-08-30

1996-06-04

Thomas, Tom

Fishing, trapping, and vermin destroying

437 37, 437 29, H01L 21265

Patent

active

055232507

ABSTRACT:
This invention relates to a method of manufacturing a MOSFET with LDD regions, high integrated semiconductor, wherein a photoresist pattern for a source/drain implant mask is formed to sufficiently cover the part where the edge between field oxide layer and LDD regions are crossed. As a result, at the place damaged from the formation of spacer at the side wall of gate electrode, high concentrated impurity should not be implanted so as to form the source/drain region within LDD regions. Consequently, this invention prevents the weakening of breakdown voltage or increase of leakage current.

REFERENCES:
patent: 5196361 (1993-03-01), Ong et al.
patent: 5272098 (1993-12-01), Smayling et al.

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