Method of manufacturing a MOSFET using accelerated ions to form

Details Method of manufacturing a MOSFET using accelerated ions to form Method of manufacturing a MOSFET using accelerated ions to form

1982-10-24

1985-02-12

Hearn, Brian E.

Metal working

Method of mechanical manufacture

Assembling or joining

29576B, 148 15, 148176, H01L 21425

Patent

active

044982240

ABSTRACT:
A method for manufacturing MOSFET type semiconductor devices comprises forming a gate insulation layer and a gate electrode on a single crystal semiconductor substrate; introducing impurities in the substrate using the gate electrode as a mask; introducing accelerated ions deeper into the substrate than the impurities and overlapping at least a portion of the region in which the impurities are introduced in order to convert that portion to an amorphous state; diffusing the impurities into the amorphous region using a heating atmosphere, in order to form source and drain regions and, at the same time, converting the amorphous region to a single crystal; and forming source and drain electrodes in contact with the source and drain regions.

REFERENCES:
patent: 4344222 (1982-08-01), Bergeron et al.
patent: 4383869 (1983-05-01), Lui
patent: 4404733 (1983-09-01), Sasaki
Yamada et al., "Formation of Shallow P.sup.+ N Junction by Low Temp. Annealing," Dig. 14th Conf. Solid State Physics, pp. 155-156 (1982).

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