Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1985-06-17
1987-03-24
Hearn, Brian E.
Metal working
Method of mechanical manufacture
Assembling or joining
29571, 148DIG50, H01L 2176, H01L 2978
Patent
active
046514112
ABSTRACT:
A method of manufacturing a MOS device wherein a semiconductor substrate is selectively etched to form a groove in a field region and an element formation region surrounded by the groove such that an angle .theta. is formed between a wall of the groove and a first imaginary extension of a top surface of the element formation region, the angle .theta. satisfying the relation, 70.degree..ltoreq..theta..ltoreq.90.degree.. Then, a field insulating film is deposited in the groove, and a MOS transistor is formed in the element formation region. The element formation region has source, drain and channel regions of a field effect transistor therein and a gate electrode formed on a gate insulating film on the channel region. The gate electrode extends onto the surface portion of the field insulating film. The thickness of an upper portion of the field insulating film above a first imaginary extension of an interface between the gate insulating film and the gate electrode is formed smaller than that of a lower portion of the field insulating film below the first imaginary extension.
REFERENCES:
patent: 3751722 (1973-08-01), Richman
patent: 3970486 (1976-07-01), Kooi
patent: 3979765 (1976-09-01), Brand
patent: 4001465 (1977-01-01), Graul et al.
patent: 4013484 (1977-03-01), Boleky et al.
patent: 4023195 (1977-05-01), Richman
patent: 4044452 (1977-08-01), Abbos et al.
patent: 4104086 (1978-08-01), Bondur et al.
patent: 4307180 (1981-12-01), Pogge
patent: 4318118 (1982-03-01), Hall
patent: 4374011 (1983-02-01), Vora et al.
patent: 4407851 (1983-10-01), Kurosawa et al.
patent: 4462847 (1984-07-01), Thompson et al.
patent: 4506437 (1985-03-01), Godejahn, Jr.
patent: 4541167 (1985-09-01), Havemann et al.
"A New Buried-Oxide Field Isolation for VLSI Devices", K. Kurosawa et al; Jun. 22-24, 1981, 39th Annual Device Research Conference, Santa Barbara, CA.
"A New Bird's-Beak Free Field Isolation Technology for VLSI Devices" Kurosawa et al; Dec. 7-9, 1981, IEDM Technical Digest, International Electron Devices Meeting, Washington, D.C.
Dang Ryo
Konaka Masami
Shigyo Naoyuki
Callahan John T.
Hearn Brian E.
Tokyo Shibaura Denki Kabushiki Kaisha
LandOfFree
Method of manufacturing a MOS device wherein an insulating film does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of manufacturing a MOS device wherein an insulating film , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a MOS device wherein an insulating film will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1345695