Method of manufacturing a moisture sensor

Details Method of manufacturing a moisture sensor Method of manufacturing a moisture sensor

1983-11-09

1985-09-17

Kaplan, G. L.

Chemistry: electrical and wave energy

Processes and products

733365, 204 56R, 204192C, 204192F, 204192EC, 324 61R, C23C 1500

Patent

active

045419043

ABSTRACT:
A moisture sensor is manufactured by applying a thin layer of tantalum oxide to a moisture insensitive substrate and placing at least two electrodes on the tantalum oxide layer. The tantalum oxide layer comprises the oxide of a highly resistive low density tantalum where the tantalum in the layer applied to the substrate has a density of less than 15 g/cm.sup.3. The low density tantalum may be applied by cathode sputtering and the oxide may be formed by anodic oxidation.

REFERENCES:
patent: 3736242 (1973-05-01), Schwartz et al.
patent: 4143177 (1979-03-01), Kovac et al.
patent: 4358748 (1982-11-01), Gruner et al.
L. I. Maissel et al., Handbook of Thin Film Technology, McGraw-Hill, New York, 1970, pp. 18-12 to 18-15.
R. W. Berry et al., Thin Film Technology, Van Nostrand Reinhold, New York, 1968, pp. 226-231.

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