Method of manufacturing a mis-type semiconductor

Details Method of manufacturing a mis-type semiconductor Method of manufacturing a mis-type semiconductor

1991-10-08

1992-11-17

Thomas, Tom

Fishing, trapping, and vermin destroying

437 27, 437 28, 437 29, 437228, 437229, H01L 2170

Patent

active

051643278

ABSTRACT:
A method of manufacturing an MIS-type semiconductor is disclosed in which an insulation layer is deposited over a semiconductor drain layer of a first conduction type and a contact region of a high concentration second conduction type, a base region of the second conduction type, and a source region of the first conduction type within the base region in the semiconductor drain layer are formed by ion injecting through the insulation layer. Performing the ion injections through the insulation layer prevents ion injection damage to the surface of the drain layer. Furthermore, since the insulation layer is formed prior to the introduction of impurities, which generate high-density crystalline defects, quality degradation in the insulation layer itself can be kept to a minimum.

REFERENCES:
patent: 4417385 (1983-11-01), Temple
patent: 4757032 (1988-07-01), Contiero
patent: 4774198 (1988-09-01), Contiero et al.
patent: 4883767 (1989-11-01), Gray et al.
patent: 4972239 (1990-11-01), Mihara
patent: 5023191 (1991-06-01), Sakurai

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