Method of manufacturing a minimum bird's beak recessed oxide iso

Details Method of manufacturing a minimum bird's beak recessed oxide iso Method of manufacturing a minimum bird's beak recessed oxide iso

1982-12-20

1985-04-02

Smith, John D.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

29576W, 156662, 427 94, 427 95, 427 96, H01L 2176

Patent

active

045087571

ABSTRACT:
A method for making a monocrystalline integrated circuit structure is described. The monocrystalline silicon body is provided. There is formed thereon a layered structure of silicon dioxide, polycrystalline silicon and silicon nitride, in that order. The layers are patterned to form openings in the structure at the areas where it is desired to form an oxide isolation pattern within the monocrystalline silicon body. If it is desired to form a semi-recessed oxide isolation there will be no etching of the monocrystalline silicon body in the openings. Should it be desired to form a full recessed oxide isolation there is etching of the monocrystalline silicon to a desired depth to form a substantially planar top surface of the monocrystalline with the recessed dielectric oxide isolation. The body is then oxidized until the desired oxide isolation pattern penetrates to the desired depth within the silicon body.

REFERENCES:
patent: 3534234 (1966-12-01), Clevenger
patent: 3648125 (1972-03-01), Peltzer
patent: 3900350 (1975-08-01), Appels et al.
patent: 3970486 (1976-07-01), Kooi
patent: 4373248 (1983-02-01), McElroy
patent: 4407696 (1983-10-01), Han
patent: 4419142 (1983-12-01), Matsukawa
Matsunaga, "Selective Polysilicon Oxidation Technology for Defect Free Isolation"Conference: International Electron Devices Meeting, Technical Digest, Washington D.C., USA, Dec. 8-10, 1980.

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