Method of manufacturing a metallic silicide transparent electrod

Details Method of manufacturing a metallic silicide transparent electrod Method of manufacturing a metallic silicide transparent electrod

1988-10-03

1992-09-29

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 2, 437 5, 437200, 437201, 148DIG147, 136256, 136258, 136252, H01L 2100, H01L 2102, H01L 2948

Patent

active

051513854

ABSTRACT:
A semiconductor device such as a solar cell, photodiode and solid state imaging device comprises a semiconductor layer made of amorphous silicon formed on a given substrate, and a transparent conductive layer formed by an interfacial reaction between the amorphous silicon and a metallic film directly formed on the amorphous silicon. This transparent conductive layer is used as a transparent electrode of the device and if necessary the remainder after having partially removed the metallic film for the transparent conductive layer is used as a conductive layer and light shielding film.

REFERENCES:
patent: 3753774 (1973-08-01), Veloric
patent: 4142195 (1979-02-01), Carlson et al.
patent: 4278704 (1981-07-01), Williams
patent: 4297393 (1981-10-01), Denning et al.
patent: 4322453 (1982-03-01), Miller
patent: 4458410 (1984-07-01), Sugaki et al.
patent: 4534099 (1985-08-01), Howe
patent: 4788582 (1986-11-01), Yamamoto et al.
Tsai, C., Summary Abstract: Metal-Amorphous Si Interfaces: Structural and Electrical Properties J. Vac. Sci. Tech. A1(2), Apr.-Jun. 1983, pp. 785-786.
Goldstein, B., Growth of Thin Platinum Films on Hydrogenated Amorphous Silicon and Its Oxide J. Vac. Sci. Tech., vol. 17, No. 3, May/Jun. 1980, pp. 718-720.
Maenpaa, M., Contact Resistivities between Solar-Cell-Type Si and Transition Metal Nitrides Aug. 1981, IEEE Conference, pp. 518-521.
Ovadyahu, Z., A Transparent-Conducting Coating for a-Si:H Based Devices Amer. Instit. of Physics, 1981, pp. 5865-5866.
Sasano, A., Semitransparent Metal-Si Electrodes for a-Si:H Photodiodes and Their Application to a Contact-Type Linear Sensor Array, Extend. Abst. of the 16th Conf. on Solid State Devices and Materials, Kobe, 1984, pp. 555-558.
Seki, K., Semitransparent Silicide Electrodes Utilizing Interaction Between Hydrogenated Amorphous Silicon and Metals, Appl. Phys. Lett. 44(7), Apr. 1984, pp. 682-683.
Anderson, J., Nickel Contacts for Low Cost Solar Cells, May 1980, IEEE Conference, pp. 948-951.
Han, M., Influence of Thin Metal as a Top Electrode on the Characteristics of P-I-N a-Si:H Solar Cells, J. Appl. Phys. 52(4), Apr. 1981, pp. 3073-3075.
Matz, R., Chemical Reaction and Silicide Formation at the Pt/Si Interface, J. Vac. Sci. Tech. A2(2), Apr.-Jun. 1984.

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