Method of manufacturing a metal-insulator-metal capacitor

Details Method of manufacturing a metal-insulator-metal capacitor Method of manufacturing a metal-insulator-metal capacitor

2006-02-13

2008-08-19

Tran, Long K (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257S534000, C257SE21011, C257SE21016, C257SE21021

Reexamination Certificate

active

07414296

ABSTRACT:
The present invention provides method of manufacturing a metal-insulator-metal capacitor (100). A method of manufacturing includes depositing a first refractory metal layer (105) over a semiconductor substrate (110). The first refractory metal layer (105) over a capacitor region (200) of the semiconductor substrate (110) is removed and a second refractory metal (300) is deposited over the capacitor region (200). Other aspects of the present invention include a metal-insulator-metal capacitor (900) and a method of manufacturing an integrated circuit (1000).

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Chu, K., et al., “Material and electrical characterization of carbon-doped Ta2O5films for embedded dynamic random access memory applications,”Journal of Applied Physics, vol. 91, No. 1, Jan. 2002, pp. 308-316.

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