Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Subsequent separation into plural bodies
Reexamination Certificate
2007-05-15
2007-05-15
Sarkar, Asok Kumar (Department: 2891)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Subsequent separation into plural bodies
C257SE21568
Reexamination Certificate
active
11004408
ABSTRACT:
The invention relates to a method for manufacturing a material compound wafer by forming a predetermined splitting area in a source substrate; attaching the source substrate to a handle substrate to form an assembly; heating the assembly for weakening the predetermined splitting area; and determining a degree of weakening of the predetermined splitting area which evidences the physical strength of the predetermined splitting area during or after heating to detect anomalies that may lead to damage of the source substrate, handle or assembly. The degree of weakening is advantageously determined in-situ and may be determined continuously or periodically during the heating. The invention further relates to an apparatus for thermal annealing device used in the manufacturing process of a material compound wafer. This apparatus generally includes a device for thermally annealing the assembly described above; and a device for determining the degree of weakening of the predetermined splitting area during or after thermal annealing to detect anomalies that may lead to damage of the source substrate, handle or assembly.
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Guiot Eric
Maurice Thibaut
S.O.I. Tec Silicon on Insulator Technologies S.A.
Sarkar Asok Kumar
Winston & Strawn LLP
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