Method of manufacturing a mask read only memory (ROM) for storin

Details Method of manufacturing a mask read only memory (ROM) for storin Method of manufacturing a mask read only memory (ROM) for storin

1994-09-30

1996-09-17

Thomas, Tom

Fishing, trapping, and vermin destroying

437 29, 437 49, 437979, H01L 21266, H01L 218246

Patent

active

055568009

ABSTRACT:
A mask ROM for storing multi-value data has a memory cell comprising a primary conductive region formed by a first conductive type semiconductor, a source region formed in the primary conductive region by a second conductive type semiconductor, a drain region formed in the primary conductive region by the second conductive type semiconductor, a channel region adjacently formed with the source region and the drain region, a gate insulation layer formed on the channel region, and a gate electrode formed on the gate insulation layer, wherein the channel region or the gate electrode is divided into a plurality of parts, each divided part having a different layer thickness from the other or a different transmissivity for ion injection, so as to form a ROM.

REFERENCES:
patent: 5128738 (1992-07-01), Lee
patent: 5149667 (1992-09-01), Choi
patent: 5192872 (1993-03-01), Lee
patent: 5200355 (1993-04-01), Choi et al.
patent: 5214303 (1993-05-01), Aoki
patent: 5215934 (1993-06-01), Tzeng
patent: 5231299 (1993-07-01), Ning et al.
patent: 5278078 (1994-01-01), Kanebako et al.
patent: 5306657 (1994-04-01), Yang
Translation of JP 55-70072, Provided in a Previous Office Action.
S. K. Ghandhi, "VLSI Fabrication Principles" 1986; pp. 348-355.

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