Method of manufacturing a magnetoresistive sensor

Details Method of manufacturing a magnetoresistive sensor Method of manufacturing a magnetoresistive sensor

1998-10-20

1999-06-08

Pianalto, Bernard

Coating processes

Direct application of electrical, magnetic, wave, or...

Magnetic field or force utilized

427127, 427130, 427131, 427132, 4273831, 427404, 4274192, B29C 3508

Patent

active

059103442

ABSTRACT:
The present invention provides a magnetoresistive sensor having at least two ferromagnetic layers provided with a non-magnetic layer therebetween; a coercive force increasing layer consisting of an antiferromagnetic material and provided adjacent to one of the ferromagnetic layers, for increasing the coercive force thereof to pin magnetization reversal, the other ferromagnetic layer having free magnetization reversal; and an antiferromagnetic layer provided to adjacent to the other ferromagnetic layer having free magnetization reversal, for applying a longitudinal bias to the other ferromagnetic layer to induce magnetic anisotropy therein due to an unidirectional exchange bias magnetic field to stabilize a magnetic domain.

REFERENCES:
patent: 4103315 (1978-07-01), Hempstead et al.
patent: 4809109 (1989-02-01), Howard et al.
patent: 5159513 (1992-10-01), Dieny et al.
patent: 5287238 (1994-02-01), Baumgart et al.
patent: 5315468 (1994-05-01), Lin et al.
patent: 5373238 (1994-12-01), McGuire et al.
patent: 5380548 (1995-01-01), Lin et al.
patent: 5436778 (1995-07-01), Lin et al.
patent: 5528440 (1996-06-01), Fontana et al.
patent: 5563752 (1996-10-01), Komuro et al.
patent: 5583725 (1996-12-01), Coffey et al.
patent: 5608593 (1997-03-01), Kim et al.
patent: 5708358 (1998-01-01), Ravipati
patent: 5742458 (1998-04-01), Koike et al.
patent: 5768067 (1998-06-01), Saito et al.
"Improved Exchange Coupling Between Ferromagnetic Ni-Fe and Antiferromagnetic Ni-Mn-based Films", American Institute of Physics, Lin Tsann, et al., Aug., 1994 (pp. 1183-1185).

Affiliated with

Also associated with

Rating

Method of manufacturing a magnetoresistive sensor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing a magnetoresistive sensor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a magnetoresistive sensor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1682294