Method of manufacturing a magnetic tunnel junction device

Details Method of manufacturing a magnetic tunnel junction device Method of manufacturing a magnetic tunnel junction device

2006-02-21

2006-02-21

Guerrero, Maria F. (Department: 2822)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S653000, C365S173000, C257S421000

Reexamination Certificate

active

07001777

ABSTRACT:
A method of manufacturing a magnetic tunnel junction device, in which a stack (1) comprising two magnetic layers (3, 7) and a barrier layer (5) extending in between is formed. One of the magnetic layers is structured by means of etching, in which, during etching, a part of this layer is made thinner by removing material until a rest layer (7r) remains. This rest layer is passivated by chemical conversion. In the relevant method, it is prevented that the magnetic layer which is not to be structured is detrimentally influenced during structuring of the other magnetic layer.

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Blamire et al. “A new Self-Aligning Process For Whole-Wafer Tunnel Junction Fabrication”, Mar. 1989, IEEE, pp. 1123-1126.

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