Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Magnetic field
Reexamination Certificate
2005-06-28
2005-06-28
Wille, Douglas A. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Magnetic field
C365S173000
Reexamination Certificate
active
06911709
ABSTRACT:
A method of manufacturing a magnetic tunnel junction device, in which a stack (1) comprising two electrode layers (3, 7) and a barrier layer (5) extending in between is formed. One of the electrode layers is structured by means of etching, in which, during etching, a part of this layer is made thinner by removing material until a rest layer (7r) remains. This rest layer is subsequently removed by means of physical etching, in which at least substantially charged particles have a motion energy which is between the sputtering threshold of the magnetic material of the rest layer and the sputtering threshold of the non-magnetic material of the barrier layer. In the relevant method, it is prevented that the electrode layer which is not to be structured is detrimentally influenced during structuring of the other electrode layer.
REFERENCES:
patent: 5637906 (1997-06-01), Konno
patent: 5650958 (1997-07-01), Gallagher et al.
patent: WO 99/22368 (1999-05-01), None
patent: WO9922368 (1999-05-01), None
Belk Michael E.
Koninklijke Philips Electronics , N.V.
Wille Douglas A.
LandOfFree
Method of manufacturing a magnetic tunnel junction device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of manufacturing a magnetic tunnel junction device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a magnetic tunnel junction device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3495982