Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2010-02-03
2011-11-15
Lindsay, Jr., Walter L (Department: 2812)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C438S478000, C257SE21461
Reexamination Certificate
active
08058080
ABSTRACT:
A magnetic material of a magnetoresistive element is formed on a lower electrode. An upper electrode is formed on the magnetic material. A resist for nano-imprint lithography is formed on the upper electrode. A first pattern or a second pattern is formed in the resist by setting a first template or a second template into contact with the resist and curing the resist. The first template has the first pattern that corresponds to the magnetoresistive element and the lower electrode. The second template has the second pattern that corresponds to the magnetoresistive element and the upper electrode. The magnetic material and the lower electrode are patterned at the same time by using the resist having the first pattern, or the magnetic material and the upper electrode are patterned at the same time by using the resist having the second pattern.
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Amano Minoru
Asao Yoshiaki
Iwayama Masayoshi
Kajiyama Takeshi
Sugiura Kuniaki
Kabushiki Kaisha Toshiba
Knobbe Martens Olson & Bear LLP
Lindsay, Jr. Walter L
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