Method of manufacturing a low resistance, high breakdown voltage

Details Method of manufacturing a low resistance, high breakdown voltage Method of manufacturing a low resistance, high breakdown voltage

1994-08-12

1996-01-09

Nguyen, Tuan H.

Fishing, trapping, and vermin destroying

437 41, 437 44, 148DIG126, H01L 21265, H01L 2176

Patent

active

054828880

ABSTRACT:
A metal oxide semiconductor field effect transistor power device with a lightly doped silicon substrate includes a source region and a drain region. At least one field implanted island region is formed along the surface of the oppositely substrate between the source and drain regions with a field oxide region formed above the field implanted region, a dielectric layer and a gate electrode of matching configurations formed over the substrate, and self-aligned source drain regions implanted into the device with external electrodes connected thereto.

REFERENCES:
patent: 4786609 (1988-11-01), Chen
patent: 5019522 (1991-05-01), Meyer et al.
patent: 5322804 (1994-06-01), Bearsom

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