Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With provision for cooling the housing or its contents
Reexamination Certificate
2007-03-27
2007-03-27
Menz, Doug (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With provision for cooling the housing or its contents
C257S675000, C257S706000
Reexamination Certificate
active
10626418
ABSTRACT:
A mold is filled with unsintered SiC particles and a melt of Al or of an Al alloy containing Si is poured into the mold for high pressure casting. Owing to the SiC particles and Si precipitated upon casting, a low expansion material having a low thermal expansion coefficient is produced. A heat transmission path is formed by Al infiltrating spaces between the SiC particles and therefore high heat conductivity is obtained.
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Kinoshita Kyoichi
Kono Eiji
Kudo Hidehiro
Sugiyama Tomohei
Yoshida Takashi
Kabushiki Kaisha Toyota Jidoshokki
Morgan & Finnegan L.L.P.
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