Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1995-05-26
1997-12-16
Carroll, J.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257 71, 257 72, 437 21, 437 29, 437 41TFT, H01L 2976
Patent
active
056988648
ABSTRACT:
Thin film transistors including polycrystalline silicon or amorphous silicon thin film channel regions having a thickness of between about 100 .ANG. and 2500 .ANG. which are thinner than at least a portion of the source and drain regions and active matrix assemblies including thin film transistors for improved electro-optical displays are provided.
REFERENCES:
patent: 3258663 (1966-06-01), Weimer
patent: 3513042 (1970-05-01), Hagon
patent: 3765011 (1973-10-01), Sawyer et al.
patent: 4112333 (1978-09-01), Asars et al.
patent: 4119992 (1978-10-01), Ipri et al.
patent: 4177473 (1979-12-01), Ovshinsky
patent: 4182965 (1980-01-01), Pfleiderer
patent: 4199384 (1980-04-01), Hsu
patent: 4431271 (1984-02-01), Okubo
patent: 4442448 (1984-04-01), Shimbo
patent: 4455495 (1984-06-01), Masuhara et al.
patent: 4528480 (1985-07-01), Unagami et al.
patent: 4582395 (1986-04-01), Morozumi
patent: 4623908 (1986-11-01), Ohsima et al.
"Controlling Polysilicon TFT Characteristics," Oyo Denshi Bussei Bunkakai Kenkyu Hoku, No. 427, pp. 25-30 (1989).
Thomas W. Little, et al., "Low Temperature Poly-Si TFTs Using Solid Phase Crystallization of Very Thin Films and an Electron Cyclotron Resonance Chemical Vapor Deposition Gate Insulator," Japanese Journal of Applied Physics, V. 30, No. 12B, Dec. 1991, pp. 3724-3728.
Hiroyuki Ohshima, et al., "Future Trends for TFT Integrated Circuits on Glass Substrates," IEEE 1989, pp. IEDM 89157-160.
Anthony Juliana, et al., "Thin-Film Polysilicon Devices for Flat-Panel Display Circuitry," SID International Symposium Digest of Technical Papers, May 1982, pp. 38-39.
Shinji Morozumi, "Active Matrix Addressed Liquid-Crystal Displays," 1985 International Display Research Conference, 1985, IEEE, pp. 9-13.
N. Sasaki, et al., "Effect of Silicon Film Thickness on Threshold Voltage of SOS-MOSFETs," Solid State Electronics, V. 22, No. 4-E, pp. 417-421.
S. Chapman, et al., "Polysilicon Switches for Display Devices," IBM Technical Disclosure Bulletin, V. 23, No. 1, Jun. 1980, pp. 351-352.
M. Matsui, et al., "Polycrystalline-Silicon Thin Film Transistors on Glass," Appl. Phys Lett. 37 (10), Nov. 15, 1980, pp. 936-937.
Kodaira Toshimoto
Mano Toshihiko
Oshima Hiroyuki
Carroll J.
Seiko Epson Corporation
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