Method of manufacturing a light emitting semiconductor device

Details Method of manufacturing a light emitting semiconductor device Method of manufacturing a light emitting semiconductor device

1981-11-25

1986-07-15

Hearn, Brian E.

Metal working

Plural diverse manufacturing apparatus including means for...

Common reciprocating support for spaced tools

29576E, 148171, 357 16, 372 46, H01L 3300, H01S 319

Patent

active

045997870

ABSTRACT:
A light emitting semiconductor device having a double hetero junction structure in which oscillation in a single lateral mode is stably effected. A stair-shaped step part is formed in a stripe shape upon the surface of a substrate. A current blocking layer of an opposite conductivity type is formed over the semiconductor substrate with a thickness such that the current blocking layer is interrupted along the upper edge of the stair-shaped step part to form a break area therein which acts as a current concentration region. Over the current blocking layer and break area are formed a lower clad layer, an active layer, an upper clad layer, and an ohmic contact layer.

REFERENCES:
patent: 4296387 (1981-10-01), Sugino et al.

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