Method of manufacturing a light emitting diode using LPE at diff

Details Method of manufacturing a light emitting diode using LPE at diff Method of manufacturing a light emitting diode using LPE at diff

1995-06-06

1997-07-29

Bowers, Jr., Charles L.

Fishing, trapping, and vermin destroying

437118, 437119, 117 56, 257 89, H01L 2120

Patent

active

056521782

ABSTRACT:
A method of manufacturing a light emitting diode, which includes the steps of bringing a semiconductor substrate of p-type or n-type into contact with a growth solution at a high temperature and thereafter, lowering the temperature so as to form a monocrystalline epitaxial layer of the same type as the semiconductor substrate on the semiconductor substrate, subsequently, further lowering the above temperature to form a first monocrystalline epitaxial layer of a reverse type to the epitaxial layer on the epitaxial layer and then, cutting off the growth solution to form an epitaxial wafer as a result, a growth solution to contact the first epitaxial layer of a epitaxial wafer at a high temperature, and thereafter, the temperature is lowered to form a second monocrystalline epitaxial layer of the same kind and type as the first epitaxial layer on the first epitaxial layer.

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O.G. Lorimor, et al. "Very High Efficiency GaP Green Light Emitting Diodes" J. Electrochem. Soc. (USA) vol. 122, No. 3 (Mar. 1975).

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