Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1979-12-26
1981-02-10
Ozaki, G.
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
29569L, 29580, 148 15, 148172, H01L 21208
Patent
active
042499674
ABSTRACT:
A small-area light-emitting diode of the surface-emitting type has a double heterojunction semiconductor structure grown on a substrate. A semiconductor blocking layer having a hole formed therein is disposed between the substrate and the layers of the double heterojunction semiconductor structure to confine the transverse current flow for greater efficiency. A metallic contact layer is formed on the surface of the double heterojunction semiconductor structure on the side opposite the substrate and has a registering hole formed therein having a size approximately equal to the size of the hole formed in the semiconductor blocking layer and disposed in registration therewith along an axis perpendicular to the layers. The cap layer of the double heterojunction semiconductor structure may include a hole etched therethrough and in registration with the previously mentioned holes for better light emission. In a further embodiment, the light-emitting layer is restricted in surface area to a region aligned with said holes for even greater light efficiency and current confinement.
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patent: 3968564 (1976-07-01), Springthorpe
patent: 3984262 (1976-10-01), Burnham et al.
patent: 4033796 (1977-07-01), Burnham et al.
patent: 4053914 (1977-10-01), Goodwin
patent: 4099999 (1978-07-01), Burnham et al.
patent: 4194933 (1980-03-01), Logan et al.
Chiang Shang-Yi
Liu Yet-Zen
International Telephone and Telegraph Corporation
O'Halloran John T.
Ozaki G.
Van Der Sluys Peter C.
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