Method of manufacturing a LiGaO.sub.2 single-crystal substrate

Details Method of manufacturing a LiGaO.sub.2 single-crystal substrate Method of manufacturing a LiGaO.sub.2 single-crystal substrate

1998-01-27

2000-04-04

Hiteshew, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

117902, 117937, C30B 1536

Patent

active

060456116

ABSTRACT:
An LiGaO.sub.2 single crystal manufactured by the Czochralski method has a crystallographic axis as a pulling direction set within an angle range of 30.degree. from a b- or a-axis direction. An LiGaO.sub.2 single-crystal substrate and a method of manufacturing the single crystal and the substrate are also disclosed.

REFERENCES:
patent: 3283164 (1966-11-01), Remeika
Kryliouk et al. "MOCVD Growth of GaN Films on Lattice-Matched Oxide Substrates", Symposium III-V Nitrides, Materials Research Soc. Symp. Proc., 449(2), pp. 123-128, Dec. 6, 1996.
Amano et al., "Metalorganic Vapor Phase Epitaxial Growth of a High Quality GaN Film Using an AIN Buffer Layer", Appl. Phys. Lett. 48(5), 1986, pp. 353-355.

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