Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2006-12-05
2006-12-05
Ahmed, Shamim (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C719S323000, C719S323000, C216S062000, C216S079000
Reexamination Certificate
active
07144820
ABSTRACT:
A method of manufacturing a layer sequence having a first and a second laterally confined structure comprises the steps of providing a first layer on a first surface portion of a substrate, which first layer is doped with dopant of a first type of conductivity, providing a second layer on a second surface portion of the substrate, which second layer is free of dopant of the first type of conductivity, forming a third layer on the first layer, which third layer is free of dopant of the first type of conductivity, and forming a fourth layer on the second layer, which forth layer is doped with dopant of the first type of conductivity. The first layer and the third layer are etched, thereby patterning the first and third layer to form the first laterally confined structure. The second layer and the forth layer are etched, thereby patterning the second and fourth layer to form the second laterally confined structure.
REFERENCES:
patent: 5854115 (1998-12-01), Gardner et al.
patent: 6168998 (2001-01-01), Park
patent: 6261885 (2001-07-01), Cheek et al.
patent: 6703269 (2004-03-01), Brown et al.
patent: 6790577 (2004-09-01), Nakamura
patent: 00/02782 (2000-04-01), None
Wolf, Silicon Processing for the VLSI Era, 2002, Lattice Press, vol. 4, pp. 244-245.
Callister, Materials Science and Engineering, 1997, John Wiley & Sons, 4th ed., pp. 605-609.
Ahmed Shamim
Brinks Hofer Gilson & Lione
Chen Eric B.
Infineon - Technologies AG
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