Method of manufacturing a junction field effect transistor

Details Method of manufacturing a junction field effect transistor Method of manufacturing a junction field effect transistor

1974-04-15

1976-04-20

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148188, H01L 21225

Patent

active

039517020

ABSTRACT:
A method of manufacturing a junction field effect transistor wherein after a P type pre-diffused layer is formed in an N type region constituting a back gate region of a junction field effect transistor, arsenic is selectively diffused into the P type pre-diffused layer to form a gate region with a simultaneous drive-in step for the P type pre-diffused layer in order to obtain a thin channel by utilizing the pull-in effect.

REFERENCES:
patent: 3484309 (1969-12-01), Gilbert
patent: 3489622 (1970-01-01), Barson et al.
patent: 3697827 (1972-10-01), Simon
patent: 3717507 (1973-02-01), Abe

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