Method of manufacturing a junction field effect transistor

Details Method of manufacturing a junction field effect transistor Method of manufacturing a junction field effect transistor

1992-08-11

1993-09-07

Quach, T. N.

Fishing, trapping, and vermin destroying

437133, 437911, H01L 21338

Patent

active

052428460

ABSTRACT:
A method of making a junction field effect transistor includes sequentially growing a first conductivity type semiconductor layer and a relatively high resistivity semiconductor layer on a relatively high resistivity semiconductor substrate; forming spaced apart relatively low resistivity first conductivity type source and drain regions in the relatively high resistivity and first conductivity type semiconductor layers; forming a second conductivity type gate region in the high resistivity semiconductor layer spaced from the source and drain regions and extending to and forming a rectifying junction with the first conductivity type semiconductor layer; and forming source, gate, and drain electrodes in contact with the source, gate, and drain regions, respectively.

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Kasahara, J., et al., "Fully Ion Implanted . . . ", Electronics Letters, Aug. 20, 1981, vol. 17, No. 17, pp. 622-623.

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