Method of manufacturing a III-V semiconductor device using a sel

Fishing – trapping – and vermin destroying

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437235, 437243, 437244, 437912, 148DIG65, H01L 2100, H01L 2102, H01L 2104, H01L 2118

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052234584

ABSTRACT:
A passivation technique which significantly reduces degradation in reverse breakdown voltage characteristics usually introduced by passivation of active regions of field effect transistors is described. The technique uses a surface treatment in a plasma to introduce into the surface an electro-negative species to maintain negative surface potential of the surface subsequent to encapsulation by the passivation material.

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