Method of manufacturing a highly integrated semiconductor device

Details Method of manufacturing a highly integrated semiconductor device Method of manufacturing a highly integrated semiconductor device

1993-06-29

1994-09-13

Thomas, Tom

Fishing, trapping, and vermin destroying

437 47, 437 48, 437 60, H01L 2170

Patent

active

053468465

ABSTRACT:
This is a method of manufacturing a DRAM cell of a highly integrated semiconductor device increased in the capacity of its capacitor as several cylinder-shaped storage electrodes with first and second polysilicon layers are formed. In order to form several cylinder-shaped electrodes, a polysilicon layer of hemisphere grain structures is used as a mask during the etching process.

REFERENCES:
patent: 5204280 (1993-04-01), Dhong et al.

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