Fishing – trapping – and vermin destroying
Patent
1995-06-07
1996-10-08
Fourson, George
Fishing, trapping, and vermin destroying
437228, 437 80, 437984, 148DIG143, H01L 21336, H01L 21033
Patent
active
055630804
ABSTRACT:
The present invention discloses a structure of a transistor in a semiconductor device and a method of manufacturing the same. The present invention manufactures a high voltage transistor by etching a silicon substrate to a depth deeper than that of the field oxide film by a self-aligned wet etching process using the field oxide film as a mask and, thereafter, by forming the first gate electrode which electrically switches ON and OFF between the source region and the drain region by using a gate electrode mask and simultaneously forming a second gate electrode to prevent a junction breakdown below the bird's beak of the field oxide film. Accordingly, the present invention can improve the degree of integration of the device by forming a gate electrode to prevent a junction breakdown below the bird's beak of the field oxide film.
REFERENCES:
patent: 3861024 (1975-01-01), Napili et al.
patent: 3958040 (1976-05-01), Webb
patent: 3980508 (1976-09-01), Takamiya et al.
patent: 4242156 (1980-12-01), Peel
patent: 4313256 (1982-02-01), Widmann
patent: 4667395 (1987-05-01), Ahlgren et al.
patent: 5132238 (1992-07-01), Murakami et al.
patent: 5200351 (1993-04-01), Hadijizadeh-Amini
Fourson George
Hyundai Electronics Industries Co,. Ltd.
Kirkpatrick Scott
LandOfFree
Method of manufacturing a high voltage transistor in a semicondu does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of manufacturing a high voltage transistor in a semicondu, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a high voltage transistor in a semicondu will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-56620