Superconductor technology: apparatus – material – process – Processes of producing or treating high temperature... – Producing josephson junction – per se
Patent
1998-08-26
1999-11-09
Yamnitzky, Marie
Superconductor technology: apparatus, material, process
Processes of producing or treating high temperature...
Producing josephson junction, per se
505410, 427 63, 216 3, 29599, H01L 3922, H01L 3924
Patent
active
059814438
ABSTRACT:
A bicrystal substrate is formed by joining end faces of a first single crystal substrate and a second single crystal substrate, the end faces having different crystal orientations. A high critical temperature superconducting thin film is then epitaxially formed on the bicrystal substrate. The superconducting thin film is etched so as to form a first superconducting electrode on the first single crystal substrate, a second superconducting electrode on the second single crystal substrate, and a superconducting bridge across a joint between the first and second single crystal substrates and connecting the first electrode and the second electrode. A conductive film is formed on the superconducting bridge by vapor deposition, and is then etched so as to form a weak link on a part of the superconducting bridge over the joint.
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OKI Electric Industry Co., Ltd.
Yamnitzky Marie
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