Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Patent
1997-12-18
2000-04-11
Nguyen, Tuan H.
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
438171, 438210, 438131, H01L 2100
Patent
active
060487399
ABSTRACT:
A high density magnetic memory device and method of manufacture therefor, wherein the magnetic bit region is provided after selected higher temperature processing steps are performed. Illustrative higher temperature processing steps include those that are performed above for example 400.degree. C., any may include contact and via plug processing. The present invention may allow, for example, contact and via plug processing to be used to form magnetic RAM devices. As indicated above, contact and/or via plug processing typically allows the size of the contacts and vias to be reduced, and the packing density of the resulting memory device to be increased.
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Hurst Allan T.
Sather Jeffrey S.
Witcraft William F.
Yue Cheisan J.
Fredrick Kris T.
Honeywell Inc.
Nguyen Tuan H.
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