Method of manufacturing a heterojunction bipolar transistor

Details Method of manufacturing a heterojunction bipolar transistor Method of manufacturing a heterojunction bipolar transistor

1989-08-30

1991-05-28

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437126, 437133, 437909, 148DIG10, 148DIG72, 148DIG84, H01L 2120, H01L 21265

Patent

active

050195247

ABSTRACT:
Disclosed is a semiconductor device including a heterojunction bipolar transistor in which the front surface of a base layer and the surface of an emitter-base junction are covered with a high-resistivity layer of compound semiconductor containing at least one constituent element common to an emitter layer and the base layer.

REFERENCES:
patent: 4586071 (1986-04-01), Tiwari
patent: 4593305 (1986-06-01), Kurata et al.
patent: 4617724 (1986-10-01), Yokoyama et al.
patent: 4679305 (1987-07-01), Motizuka
patent: 4746626 (1988-05-01), Eda et al.
patent: 4766092 (1988-08-01), Kuroda et al.
patent: 4872040 (1989-10-01), Jackson
Bailbe et al., "111 V Heterojunction Bipolar Transistors", Solid State Electronics, vol. 30, No. 11, pp. 1159-1169, 1987.

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