Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of...
Reexamination Certificate
2000-03-30
2002-10-08
Everhart, Caridad (Department: 2825)
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
C438S312000, C438S285000
Reexamination Certificate
active
06461925
ABSTRACT:
FIELD OF THE INVENTION
This invention relates, in general, to integrated circuits (ICs), and more particularly, to methods of manufacturing ICs having bipolar transistors.
BACKGROUND OF THE INVENTION
Bipolar Complimentary Metal-Oxide-Semiconductor (BiCMOS) ICs are used in a wide range of applications. Most of these BiCMOS ICs use homojunction bipolar transistors with limited electrical performance characteristics. Using band gap engineering, researchers have developed heterojunction bipolar transistors (HBTs) with electrical performance characteristics that are superior to those of homojunction bipolar transistors. However, the integration of these HBTs with conventional CMOS manufacturing processes is complicated. Accordingly, a need exists for a method of manufacturing heterojuniction BiCMOS ICs where the manufacturing steps specific to the HBT are modular and compatible with a wide range of conventional CMOS manufacturing processes.
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patent: 6043552 (2000-03-01), Miwa
K. E. Ehwald, et al. “Modular Integration of High Performance SiGe:C HBT's . . . ” 1999 IEEE 0-7803-5413-3/99.*
S.A. St.Onge, et al. “A 0.24 um SiGe BiCMOS . . . ” 1999 IEEE 0-7803-5712-4/99.*
Jeng, “Impact of Extrinsic Base Process on NPN HBT Performance and Polysilicon Resistor in Integrated SIGe HBTs,” IEEE, pp. 187-190 (1997).
Modular Integration of High-Performance SiGe:C HBTs in a Deep Submicron, Epi-Free CMOS Process, 0-7803-5413-3/99 1999 IEEE, K.E. Ehwald, et al.
A 0.24 &mgr;m SiGe BiCMOS Mixed-Signal RF Production Technology Featuring a 47 GHz ftHBT and 0.18 &mgr;m LeffCMOS, 0-7803-5712-4/99 1999 IEEE, S.A. St.Onge, et al.
Burger Vida Ilderem
Dahl Phillip W.
John Jay P.
Kaneshiro Michael H.
Kirchgessner James A.
Everhart Caridad
Motorola Inc.
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