Method of manufacturing a heteroepitaxial compound semiconductor

Details Method of manufacturing a heteroepitaxial compound semiconductor Method of manufacturing a heteroepitaxial compound semiconductor

1988-04-04

1989-06-27

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG48, 148DIG65, 148DIG72, 148DIG169, 156612, 437107, 437126, 437133, 437173, 437936, 437963, 437 80, H01L 21205

Patent

active

048430293

ABSTRACT:
A method of manufacturing a semiconductor device is described in which gaseous material is supplied into a reaction chamber containing a substrate to cause a first epitaxial layer of a first material to grow on the substrate and switching means are then operated to alter within a predetermined period the supply of gaseous material into the reaction chamber to cause a second eitaxial layer of a second material to grow on the first layer. During the predetermined period of radiant heat source is activated to radiantly heat the surface of the first layer so as to smooth the first layer on an atomic level before growth of the second layer is commenced. The radiant heat source may be a laser capable of directing one or more laser pulses at the surface to be radiantly heated.

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patent: 4740386 (1988-04-01), Cheung
Bedair et al., "Laser Selective Deposition of GaAs on Si", Appl. Phys. Lett. 48(2), Jan. 13, 1986, pp. 174-176.
Soga et al., "High Temperature Growth Rate in MOCVD Growth of AlGaAs", J. Crystal Growth, 68 (1984), pp. 169-175.
Kukimoto et al., "Selective . . . Laser-Assisted MOVPE of GaAs and AlGaAs", J. Crystal Growth, 77 (1986), pp. 223-228.
Aoyagi et al., "Laser-Enhanced Metalorganic Chemical Vapor Deposition Crystal Growth in GaAs", Appl. Phys. Lett., 47(2), Jul. 15, 1985, pp. 95-96.

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