Method of manufacturing a hetero bipolar transistor

Details Method of manufacturing a hetero bipolar transistor Method of manufacturing a hetero bipolar transistor

1994-07-25

1995-03-21

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 89, 437106, 437131, H01L 21265

Patent

active

053995112

ABSTRACT:
The specification discloses a hetero bipolar transistor which comprises a semiconductor substrate, a first silicon layer serving as a collector, a first silicon-germanium layer serving as a base, a second silicon layer serving as a collector, and a second silicon-germanium layer. A side wall of the second silicon-germanium layer is in contact with side walls of the first silicon layer, the first silicon-germanium layer and the second silicon layer. The second silicon-germanium layer is disposed to surround the first silicon layer, the first silicon-germanium layer, and the second silicon layer, and has an energy band gap substantially the same as that of the first silicon-germanium layer.

REFERENCES:
patent: 3242018 (1966-03-01), Grabmaier et al.
patent: 4935797 (1990-06-01), Jambotkar
patent: 4963957 (1990-10-01), Ohi et al.
patent: 4969026 (1990-11-01), Vander Velden et al.
patent: 5006912 (1991-04-01), Smith et al.
patent: 5140400 (1992-08-01), Morishita
patent: 5198689 (1993-03-01), Fujioka
Theodore I. Kamins et al., "Small-Geometry, High-performance, Si-Si.sub.1-x Ge.sub.x Heterojunction Bipolar Transistors," IEEE Electron Device Letters, No. 11, Nov. 1989 (New York) European Search Report.
John D. Cressler et al., "Sub-30-ps ECL Circuit Operation at Liquid-Nitrogen Temperature Using Self-Aligned Epitaxial SiGe-Base Bipolar Transistors," IEEE Electron Device Letters, vol. 12, No. 4, pp. 166-168, (Apr. 1991).

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